No abstract

Megawatt class Insulated Gate Bipolar Transistors [IGBTs] find many uses in industrial applications such as traction drives, induction heating and power factor correction. At present, these devices are not optimized for higher speed pulsed-power applications, such as kicker magnets or klystron modulators. This paper identifies fundamental issues that limit the dI/dt performance of standard commercial packages, and investigates several IGBT design optimizations that significantly improve high-speed performance at high peak power levels. The paper presents design concepts, results of electromagnetic simulations, and performance data of actual prototypes under high dI/dt conditions.

No abstract

Megawatt class Insulated Gate Bipolar Transistors[IGBTs] find many uses in industrial applications such as traction drives, induction heating and power factor correction. At present, these devices are not optimized for higher speed pulsed-power applications, such as kicker magnets or klystron modulators.This paper identifies fundamental issues that limit the dIidt performance of standard commercial packages, and investigates several IGBT design optimizations that significantly improve high-speed performance at high peak power levels.The paper presents design concepts, results of electromagnetic simulations, and performance data of actual prototypes under high dI/dt conditions.