The dominant carbon-related radiation damage center in silicon was studied in detail by deep level transient spectroscopy. Samples with different carbon and oxygen content were implanted with gradually increasing proton fluence. Two energetically closely spaced levels were revealed and tentative identities were assigned. One at ET+EV=0.344 eV (σp=1.1×10−16 cm2) is assigned as the C+Oi complex, and that at ET+EV=0.370 eV (σp=8×10−18 cm2) is assigned as the Cs-Sii-Cs complex. It was shown that the concentration of these defects is correlated to the total concentration of carbon in the crystal.

The most common electron trap in nitrogen doped GaP (0.45 eV below the conduction band) was studied in detail. It was established that the trap concentration quadratically depends on the N concentration and nearly linearly on the net donor concentration. Recombination enhanced anneal of this trap is accompanied by an increase of the nearest-neighbor nitrogen pair luminescence. A tentative model is suggested to identify this trap as a nitrogen split interstitial pair on phosphorous site.

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It{icrowave photoconductivity decay was measured in the function of the excitation light intensity. Using a new approach to analyze recombination lifetime data an experimental method is presented which is capable of producing qualitative lateral deistribution maps of different metal contaminants in a silicon wafer.