A yield deficit in RBS spectra is observed for Ge and Sb implants, a less pronounced but observable effect is found for In implant, and no change in BBS spectra is detected for Kr implant into Ge. The effect is dose dependent, after reaching a critical dose, the yield deficit appears. This critical dose is 3 × 1015 atom/cm2 for Ge and 2 × 1015 atom/cm2 for Sb implantation and with increasing dose the yield deficit becomes more and more pronounced. This is similar to earlier findings. In all cases, except for the noble gas (Kr, Xe) implants, the color of the implanted specimen turns to black. At the same time, SBM investigations show a peculiar surface morphology. Xe–Sb double implants are also investigated. Implanting first the noble gas (Xe) and then Sb, the effect is not observed. Laser annealing of In implanted Ge with Q‐switched ruby laser (25 ns, 0.51 Jcm−2) results in a fairly good recrystallization and segregation of the indium to the surface. The peculiar surface morphology together with the color change disappears due to pulsed laser annealing.