Articles you may be interested inComplementary metal-oxide-semiconductor-compatible and self-aligned catalyst formation for carbon nanotube synthesis and interconnect fabrication J. Appl. Phys. 111, 064310 (2012); 10.1063/1.3694678 Self-aligned contact metallization technology for III-V metal-oxide-semiconductor field effect transistorsApplication of the footing effect in the micromachining of self-aligned, free-standing, complimentary metal-oxide-semiconductor compatible structures

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A significant reduction in contact resistance of palladium/silicon contacts was realised by the use of a thin intermediate gallium layer. The contact resistance of the palladium/gallium/silicon contact was found to be similar to aluminium/silicon contacts on 0.5 Ω cm silicon. Solar cells processed on 1 Ω cm substrates with this structure demonstrated better contact properties than conventional aluminium/silicon contacts. The improved characteristics are believed to be a result of gallium/silicon alloying at low temperature (400°C). The palladium layer is critical as aluminium/gallium/silicon layers show dramatically increased contact resistance. The palladium silicide may interact with the aluminium layer to form a stable ternary compound, preventing aluminium from penetrating deeper into the silicon. Copyright © 2001 John Wiley & Sons, Ltd.

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A fully CMOS compatible bipolar technology is studied. 2-D process simulations of the device have been carried out before wafer processing ; comparisons of the results with experiments are presented. A new idea for making the collector, without standard epitaxy of a highly doped buried layer, is described. The 2-D simulation results enable the advantages to be checked with regard to the classical approach