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An improvement is made on the technique of determining the impurity density in a semiconductor from C-V measurements. It is shown that the average impurity density inside the depletion region plays a major part in precise determination of shallow and deep impurity profiles. Measurements of time variation of the bias voltage with the capacitance unchanged are useful for deep levels, and make it feasible to gain knowledge of their energy levels and density profiles simultaneously. These techniques are successfully applied to n-type VPE GaAs on Cr-doped semi-insulating substrates.