Nanophase semiconductors are of interest for their unique, size-tunable solar spectral absorption characteristics as well as their potential to contribute to the improved energy conversion efficiency of photovoltaics (PV). Embedding these nanoparticles within electrically active transparent conductive oxides (TCO) can also provide an opportunity for enhanced, long-range carrier transport. However, differences in the atomic and electronic structure, dielectric behavior, and chemistry between the matrix and semiconductor phases highlight the influence of interfacial effects on the optical absorption properties of the composite. In this work, nanocomposites of Ge:indium tin oxide (Ge:ITO) and Ge:ZnO were fabricated with sequential RF-magnetron sputtering and annealed at temperatures from 310 to 550 °C to investigate the impact of matrix identity on this interface and its contribution to nanostructure-mediated optical absorption. Transmission electron microscopy showed a decrease in Ge nanocrystal size relative to the initial semiconductor domain size in both matrices that was correlated with an increase in absorption onset energy after annealing. The effect was particularly pronounced in Ge:ITO composites in which Raman spectroscopy indicated the presence of germanium oxide at the semiconductor-ITO interface. These results support the primary contribution of carrier confinement in the Ge nanophase to the shifts in absorption onset energies observed.
Nanophase semiconductor composites are widely researched for the development of third-generation photovoltaic (PV) devices. Through quantum-size effects and phase assembly manipulation the optical absorption and carrier transport properties of nanocomposite films can be influenced. We investigate the potential for improved PV-relevant material performance by examining the photo-sensitization of indium-tin-oxide (ITO) with nanophase germanium (Ge). Nanocomposite films are produced by a sequential, RF-magnetron sputter deposition technique. Deposition control and post-deposition annealing are used to demonstrate the manipulation of the extended-assembly of the nanocrystalline Ge phase. Optical absorption characteristics were correlated to variations in the composite film structure as confirmed by transmission electron microscopy. In addition to structure-dependent variation in spectral absorption, spectrally resolved photoconductivity measurements demonstrate enhanced photoconductivity of composite films associated with the incorporation of the Ge phase into the ITO host. These results support the further evaluation of such nanocomposite TCO materials in optoelectronic devices, including PV systems.
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