Spin torque switching is investigated in perpendicular magnetic tunnel junctions using Ta∣CoFeB∣MgO free layers and a synthetic antiferromagnet reference layer. We show that the Ta∣CoFeB interface makes a key contribution to the perpendicular anisotropy. The quasistatic phase diagram for switching under applied field and voltage is reported. Low switching voltages, Vc 50 ns=290 mV are obtained, in the range required for spin torque magnetic random access memory. Switching down to 1 ns is reported, with a rise in switching speed from increased overdrive that is eight times greater than for comparable in-plane devices, consistent with expectations from a single-domain model.

T hin-fi lm technology is widely implemented in numerous applications 1. Although fl at substrates are commonly used, we report on the advantages of using curved surfaces as a substrate. Th e curvature induces a lateral fi lm-thickness variation that allows alteration of the properties of the deposited material 2,3 . Based on this concept, a variety of implementations in materials science can be expected. As an example, a topographic pattern formed of spherical nanoparticles 4,5 is combined with magnetic multilayer fi lm deposition. Here we show that this combination leads to a new class of magnetic material with a unique combination of remarkable properties: Th e so-formed nanostructures are monodisperse, magnetically isolated, single-domain, and reveal a uniform magnetic anisotropy with an unexpected switching behaviour induced by their spherical shape. Furthermore, changing the deposition angle with respect to the particle ensemble allows tailoring of the orientation of the magnetic anisotropy, which results in tilted nanostructure material.

We demonstrate that the switching field distribution (SFD) in arrays of 50 nm to 5 microm Co/Pd elements, with perpendicular anisotropy, can be explained by a distribution of intrinsic anisotropy rather than any fabrication related effects. Further, simulations of coercivity and SFD versus element size allow the distribution of intrinsic anisotropy to be quantified in highly exchanged coupled thin films where the reversal mechanism is one of nucleation followed by rapid domain wall motion.

Epitaxial oxide trilayer junctions composed of magnetite (Fe3O4) and doped manganite (La0.7Sr0.3MnO3) exhibit inverse magnetoresistance as large as -25% in fields of 4 kOe. The inverse magnetoresistance confirms the theoretically predicted negative spin polarization of Fe3O4. Transport through the barrier can be understood in terms of hopping transport through localized states that preserve electron spin information. The junction magnetoresistance versus temperature curve exhibits a peak around 60 K that is explained in terms of the paramagnetic to ferrimagnetic transition of the CoCr2O4 barrier.

Spin-transfer torque magnetic random access memory (STT-MRAM) is one of the most promising emerging non-volatile memory technologies. MRAM has so far been demonstrated with a unique combination of density, speed, and non-volatility in a single chip, however, without the capability to replace any single mainstream memory. In this paper, we demonstrate the basic physics of spin torque switching in 20 nm diameter magnetic tunnel junctions with perpendicular magnetic anisotropy materials. This deep scaling capability clearly indicates the STT MRAM device itself may be suitable for integration at much higher densities than previously proven.