Silicon dioxide growth curves produced by a rapid thermal processor were analyzed. No break point was observed in the growth curves. Of the kinematical models being compared, the linear-parabolic equation gave the best fit. However, the coefficients of the equation are thickness dependent as in the case of diffusion furnace oxide growth data. The correlation in the growth curves indicated similar oxide growth kinematics for the two types of oxidation equipment. Under certain oxidation conditions, the coefficient of the linear term may have a negative value and appears to be determined by the oxidation temperature and oxygen flow rate.

Hopewell Junction, N.Y. 12533The I-V characteristics of thin SiO, films with thicknesses ranging from 35 to 250A were studied using conventional Al gate MOS capacitors prepared on < 100> p type substrate as the test vehicle. Several measurement techniques including constant voltage, constant current and voltage pulse were used. Consistent results have been obtained. Time dependent currents are observed in the low field region, i.e. less than 8 MV/cm for oxides thicker than 5OA due to displacement currents and charge trapping. The slope of the Fowler-Nordheim plot is sensitive to the way the oxide field is estimated. For thicker oxides (greater than lOOA), the slope may have a value between 240-300 MV/cm depending on the estimated oxide field. For thinner oxides, the slope is smaller due to the enhancement in the direct tunneling effect.