Introduction. Adequate modeling of semiconductor devices with a p–n-junction in reverse bias represents a relevant research problem. The existing quasistatic and non-quasistatic models fail to provide a satisfactory description for the dependence of nonequilibrium charge carrier lifetime on current density. This leads to significant simulation errors (tens of percent) at pulsed broadband signals. Simulation errors arise, because the existing models regard the lifetime as a constant value.Aim. To propose and investigate an equivalent circuit of a p–n-junction considering the dependence of the lifetime of nonequilibrium charge carriers on direct current, with the possibility of its simple integration into CAD.Materials and methods. The study was carried out on the example of a fast recovery silicon diode BAS16J with a p–n-junction manufactured by Nexperia. A modified diode model is proposed in the form of an equivalent circuit that considers the dependence of the lifetime of nonequilibrium charge carriers on the direct current of the p–njunction at high injection levels.Results. The discrepancy between the experimental and simulated curves did not exceed ±9 % under pulsed diode operation. The extraction of parameters in the proposed model is carried out conventionally, from the current-voltage and capacitance-voltage characteristics of the diode.Conclusion. The proposed non-quasistatic equivalent diode circuit can be used when designing radio electronic devices operated at short-pulse broadband signals. The proposed diode model can be easily implemented in modern CAD systems at the user level.

A voltage surge at the beginning of the transient characteristic for a forward-biased p–n-junction is demonstrated, which occurs due to the dependence of the series loss resistance on the diffusion charge. It is shown that modern SPICE models of a p–n-junction do not allow one to describe this surge due to the fact that the series resistance is assumed to be independent of the charge, and the accumulated diffusion charge is calculated in the quasi-static approximation. A non-quasi-static model of transient processes in a forward-biased p–n-junction is proposed, which correctly describes the overshoot in the direct recovery transient response. The proposed model includes only common quasistatic elements of computer-aided design systems, which makes it available for implementation at the user level.

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The article discusses the key factors influencing the discrepancy between the experimental and model curves when simulating a p – n junction on pulsed broadband signals. The reason for the discrepancy lies in the quasi-static representation of the forward and backward reconstruction of the p – n junction in the standard SPICE model. The quasi-static approximation does not take into account the transient processes in the p – n junction, which are associated with the transit time of minority charge carriers and the series resistance of losses.