I n low-ohmic n-type ZnSe crystals with the room temperature specific resistance of (3 t o 5) rZ cm and electron concentration from 3 x 10l6 to 2 x 10l6Hall-effect, electrical conductivity, and charge carrier mobility is investigated in the temperature interval from 10 t o 300 K. The basic parameters of the samples are determined. It is found from the experimental data that the mobility is higher than the theoretical value in the investigated temperature range. It is argued that in the region of ionized impurity scattering this descrepancy between theory and experiment is due t o the inadequacy of known scattering based on the Born approximation, as for ZnSe this approximation is valid at T > 140 K, where the phonon scattering is predominant. To square the theory with the experiment in the phonon scattering region a polaron effect is taken into account, which manifests itself in renormalization of the carrier effective mass as well as in alteration of the mobility temperature dependence due t o the effect of screening of the interaction with polar vibrations. The theoretical consideration of this question is given which allows t o bring the theory and the experiment to a satisfactory correspondence.

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The transverse electric field E y which appears in lateral superlattices (SLs) in the presence of a high applied electric field E x and a low magnetic field H normal to the SL plane (H OZ) is calculated. When the electron energy spectrum is non-additive, the field E y contains both the Hall field and the spontaneous transverse electric field which exists without H. The field E y is a multiple-valued and sign-changing function of E x . The kinetic potential whose minimum corresponds to the stationary state of the non-equilibrium electron gas is used. The magnetoresistance caused by the appearance of a spontaneous transverse EMF is investigated.

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