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Recently a new lateral power MOSFET named accumulation lateral DMOS transistor (ALDMOST) has been proposed. We have investigated the dependence of the ON-resistance of this type of device on the oxide thickness and the additional semi-insulating layer along the surface of the gate oxide above the drift region. This layer has been introduced in order to lower the high ON-resistance which is in general a disadvantage of this type of MOS transistors

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