Photolumineseent methods are proposed for the determination of the built‐in field E, the graded layer thickness, and the main recombination parameters: the diffusion and diffusion‐drift lengths, the surface recombination velocities on the illuminated and back surfaces, and the emission internal efficiency.

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The stationary photoconductivity and kinetic characteristics in semi-insulating GaAs compensated by oxygen and chromium are investigated : namely, stationary photoconductivity and intrinsic photocurrent optical quenching spectra in the region 0.45 to 1.5eV, temperature quenching and current-light intensity characteristics of the stationary photocurrent, and the kinetics of the photocurrent decay under intrinsic and impurity photoexcitation. The results obtained are interpreted taking into account fast (8) and slow (r) recombination channels. From the analysis of these dependences a number of main parameters of r and s recombination centres is determined: the energy position of the r and s centres (Evr,& the ratio of hole to electron capture cross-section a t r centres (Spr/Sm), the values of Snr and 8as well as the concentration (N,), and initial hole occupation (P:) of r centres. The nature of r and s centres in GaAs (0) and GaAs (Cr) is discussed. klccneAodaHH cTaqHoHapHare H KmxenirecKtie xapamepHcTam @OTO~POBOJIH-MOCTH B nOJIyU30JIXipyIoWeM GaAs, KOMneHCUpOBaHHOM KIICJIOPOAOM El XPOMOM : CIleHTpbI CTaUUOHapHOfi @OTOnPOBOAHMOCTH H OnTH9eCKOr0 I'aIUeHHR CO6CTBeH-H O r O @OTOTOKa B o6nac~H 0,45 L[O 1,s 3B, TeMnepaTypHOe I'aIueHHe H n A X CTaUHO-HapHor0 @OTOTOKa, KHHeTHKa CIlaAa (POTOTOKB B o 6 n a c~~ CO6Cf3eHHOrO H IIpHMeC-H O r O @OTOB036ym~eHHfl. n0JIyWHHble pe3yJIbTaTH HHTepIIpeTHpyIOTCJl C y9eTOM ~H C T P O~O ( 8 ) Xi MeJXJIeHHOrcU (r) KaHaJIOB peKOM6HHaUIIH. kl3 aHaJlH3a yKa3aHHLdX 3aBHCHMOCTefi HafineH PRA OCHOBHHX IlapaMeTpOB r & l 8-qeHTPOB peKOM6HHaqUII : 3JleKTPOHOB II AbIPOK r-IIeHTpaMH (#pr/&), BeJIUqH;bI #m H' 8,,s .a TaK?Ke KOHUeH-TpaUHH (N,) EI HaqaJIbHOe 3aIIOJIHeHHe L[HpKaMH (P!) r-qeHTPOB. 06CymAaeTCfl a~e p r e~~i r e c~o e nonoxiemie r-a s-qeHTpoB (Evp,s), OTHomenne ceremfi 3 a x~a~a npHpoAa r-II s-qeHTpoB B GaAs(0) H GaAs(Cr).

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