No abstract

We have measured the differential cross-sections for the elastic as well as inelastic scattering populating the 2.43[Formula: see text]MeV [Formula: see text] excited state in [Formula: see text] using [Formula: see text] beams at energies of 30, 40 and 47[Formula: see text]MeV on a [Formula: see text] target. The experimental results for the elastic scattering were analyzed within the framework of the optical model using the Woods–Saxon and double-folding potentials. The theoretical calculations for the concerned excited states were performed using the coupled-channel method. The optimal deformation parameters for the excited states of [Formula: see text] nucleus were extracted.

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Researchers performing radiation testing on electronic components often rely on semi-empirical prediction codes for determining the linear energy transfer (LET) (or electronic stopping force) of ions, without paying much attention to their reliability. However, it is seen that estimations calculated with different codes can have over 10% discrepancies, especially in the case of heavy ions with higher LET (e.g., xenon). As a consequence of the modern component fabrication techniques this has become an important issue when studying the radiation durability of electronics. In order to clarify this inconsistency, LET measurements for 131 Xe and 82 Kr in silicon have been undertaken and obtained results are presented, discussed and compared with earlier predicted data.