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Double-drift silicon IMPATTs for high power pulsed and CW applications have been optimized by the proper design of the width and impurity concentration in both the N and P-layers. Peak pulse powers greater than 18 watts at a 25% duty cycle were obtained at 10 GHz with the junction temperature rise limited to 2000C. For similar temperature rises CW powers of 3.4 watts at 11.5 GHz and 4.2 watts at 8.5 GHz were achieved. Conversion efficiencies were between 10.5 and 13.7%. Some detailed measurements of the large-signal conductance and FM noise of the CW devices are presented.