Measurements have been made of the excess noise in silicon. The specimens were ohmic, uniform cross-section JFET channels with no active oxide interfaces. The gate voltage was used to deplete the channel and change one transverse linear dimension. The temperature was varied between 77K and 368K to change the dominant scattering mechanism. The carrier density and mobility profiles across the channel were measured. At low temperatures one excess noise component was identified as due to donor occupation fluctuation. The observed excess noise component with a 1/f spectrum has been compared with the predictions of various models. The magnitude of the noise and its dependence on the scattering mechanism do not agree with the mobility fluctuation model.

No abstract