1 . The simulations were performed for ranges of film thicknesses and photoelectron emission angles and for two common configurations for X-ray photoelectron spectroscopy (XPS), the sample-tilting configuration and the Theta Probe configuration. We determined photoelectron effective attenuation lengths (EALs) by two methods, one by analyzing photoelectron intensities as a function of film thickness for each emission angle (Method 1) and the other by analyzing photoelectron intensities as a function of emission angle for each film thickness (Method 2). Our analyses were made with simple expressions that had been derived with the assumption that elastic-scattering effects were negligible. We found that EALs from both methods were systematically larger for the Theta Probe configuration, by amounts varying between 1% and 5%, than those for the sample-tilting configuration. These differences were attributed to anisotropy effects in the photoionization cross section that are expected to occur in the former configuration. Generally, similar EALs were found by each method for each film material although larger EALs were found from Method 2 for film thicknesses less than 1.5 nm. SESSA is a useful tool for showing how elastic scattering of photoelectrons modifies EALs for particular materials, film thicknesses, and XPS configurations.

The effects of elastic scattering and photoionization anisotropy have been studied for angle-resolved XPS (ARXPS) instruments in which the angular distribution is measured for a fixed sample geometry, in contrast to conventional ARXPS in which the sample is tilted for angular variation. The analyzed data were generated by the National Institute of Standards and Technologydatabase for the Simulation of Electron Spectra for Surface Analysis, which provides a simple way to study the influence of the aforementioned effects on compositional depth profile reconstruction. The abovementioned effects have been studied for a 15-Å film of SiO 2 on Si covered by a 5-Å carbon contamination layer. For this sample, the effects of anisotropy were stronger than the effects of elastic scattering. Larger effects of elastic scattering have been observed for HfO 2 sample.

We present the preliminary results of our code OPAQS (opacity calculation using quantum statistical model) that is based on the self consistent Hartree-Fock-Slater model for the average atom. The code is capable of performing robust calculations of average charge state, frequency-dependent and mean opacities. The accuracy of the atomic model is verified by comparing the calculations of average charge state with various published results. The monochromatic opacities for iron computed at different sets of temperatures and densities are compared with LEDCOP. The Rosseland and Planck opacities for iron and aluminum are validated with some state-of-the-art codes. The results are in good agreement with the published data.

Angular distributions of photoelectrons emitted from semi-infinite Cu, Ag, Pt and Au specimens have been measured for off-normal emission angles in the range between 20 and 70• with a Thermo Theta Probe electron spectrometer. Experimental peak intensities for peaks of atomic subshells observable in the spectra were compared with results of simulations using the NIST Database for the Simulation of Electron Spectra for Surface Analysis (SESSA) that takes into account the effects of (i) anisotropy of the photoelectric cross-section; (ii) elastic scattering of the photoelectrons; and (iii) the finite solid angle of the detector. In addition, a separate correction was made to the simulated intensities for the effects of surface excitations. The combined influence of these effects was found to significantly affect the angular distributions. Furthermore, it was found that ratios of the calculated peak intensities of the observed subshells for a particular material to the measured intensities deviate from unity by typically less than 1% after corrections for multiple inelastic scattering and surface excitations.

An interlaboratory study has been conducted to determine the following: (i) the similarities and differences of film thicknesses and composition profiles obtained from analyses of simulated angle‐resolved X‐ray photoelectron spectroscopy (ARXPS) data by different analysts using different algorithms for data analysis, and (ii) the effects of two assumptions commonly made in data‐analysis algorithms for ARXPS on derived film thicknesses and composition profiles. The analyzed data were generated by the National Institute of Standards and Technology Database for the Simulation of Electron Spectra for Surface Analysis, (SESSA) which provides a simple way to study the influence of the aforementioned effects on compositional depth profile reconstruction. Sets of simulated ARXPS data were produced for thin films of SiO2, SiON, HfO2, and HfON of varying thicknesses on a Si substrate. For some HfON films, the N concentration varied with depth. Eleven groups participated in the round robin study. The majority (eight) employed a commercial ARXPS instrument in which the angular distribution is measured for a fixed sample geometry, in contrast to conventional ARXPS in which the sample is tilted for angular variation. The average deviations between the reported average depth, film thickness, and amount of material typically varied between 20% and 30% but were considerably larger, between 30% and 80%, for some cases. The average errors were generally larger for simulations that included elastic scattering and the finite analyzer‐acceptance angle (realistic conditions) than those for simulations that neglected elastic scattering and the finite analyzer‐acceptance angle (simplified conditions). The retrieved N depth profiles were quantitatively different from the true depth profiles and showed substantial variability among the group of members who used the same instrument and analysis software. Copyright © 2014 John Wiley & Sons, Ltd.