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The development of a new process for fabricating transferred substrate heterojunction bipolar transistors is discussed, in which the emitter contact resistance is kept low in spite of submicron dimensions, thus achieving a device free from scaling limits. I. IntroductionTransistor bandwidths are now approaching terahertz frequencies, and the key to high speed transistor operation is aggressive device scaling. InP HBTs have the potential for highest frequency operation compared to any transistor in any material system, and are capable of current and power-gain cutoff frequencies in excess of 500GHz. However, recent work on developing highly scalable submicron InP HBT technology has faced major difficulties in achieving the required low device parasitics, in particular a low emitter contact resistance, thereby limiting the achievable wide bandwidth of this high-speed device to less than 50% of its potential.

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This paper presents a study on the behavior of single-mode/multimode/single-mode sensors with diamond-like carbon coating of high refractive index. Spectra and response for different values of the external medium refractive index are recorded and analyzed.