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It is proposed that the termination of each germanium surface atom in a (111) plane with an ethyl group should provide stabilization of the chemical composition of the surface, chemical stabilization being a prerequisite for the stabilization of electrical properties. The germanium surface is first activated with hydrogen chloride and chlorine gases and then ethylated by exposure to ethyl magnesium bromide. Evaluation by various methods indicates that ethyl groups are reproducibly and strongly bound to the surface in a ratio very close to one ethyl group for each surface atom. Details of the electrical and chemical evaluation are included in the following two papers.

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Surface photovoltage spectroscopy was successfully applied to silicon-onsapphire and it enables simultaneous determination of band structure, trapping centers, deep levels, the refractive index, and the film thickness. Studies of "as-grown" and ion-implanted films revealed a noticeable degree of amorphization manifested by 1.45 eV energy gap structure clearly resolved in addition to standard 1.1 eV structure of bulk St. Three deep levels were identified, i.e., electron trap at Ec --Et ----0.25 eV, hole trap at Et --Ev _--0.15 eV, and deep centers at Ec --Et ~ 0.6 eV. It has been found that the degree of amorphization and concentration of deep centers in the layers depends on the thermal history of the SOS film.* Electrochemical Society Active Member. Key words: defects, amorphous, silicon-on-sapphire, surface photovoltage. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 128.122.253.212 Downloaded on 2015-05-23 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 128.122.253.212 Downloaded on 2015-05-23 to IP ABSTRACTThe stoichiometric solid electrolyte, RbCu3C1812, can be converted, by cold-work, to a new low symmetry phase with the probable composition RbCu4C13(I1.96C10.o4) (and very small amounts of CuI and probably, Rb2CusCIj). The new phase has a crystal structure which appears to be

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