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We report fabrication and characterization of a 0.25-pm gate ion-implanted GaAs MESFET with a maximum current-gain cutoff frequency fi of 126 GHz. Extrapolation of current gains from biasdependent S-parameters at 70-100 percent of Idss yields f,'s of 108-126 GHz. It is projected that anf, of 320 GHz is achievable with 0.1-pm gate GaAs MESFET's. This clear demonstration of f,'s over 100 GHz with practical 0.25-pm gate length substantially advances the high-frequency operation limits of short-gate GaAs MESFET's.

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