No abstract

One way of making a transition-edge sensor (TES) is by utilizing the proximity effect, in which the T C of a superconducting film is reduced with a normal metal film in metallic contact. The T C of a bilayer TES can be estimated by solving the Usadel equations with given boundary conditions. The classical boundary conditions of a bilayer include a specific interface resistance being temperature-independent. In this paper, we will introduce a temperature-dependent specific interface resistance. By fitting the measured T C data of Ir/Au bilayers from the literature to a T C calculation model, we will compare the fit parameters and fit errors with the temperaturedependent specific interface resistance described in this work and with the classical temperature-independent specific interface resistance.

The effect of precursor entrance sequence during atomic layer deposition (ALD) on the chemical and electronic characteristics of Al2O3/Ge interface is investigated by X-ray photoelectron spectroscopy (XPS) and capacitance-voltage (C-V) measurement. The trimethyla-luminium (TMA) or H2O precursor is first introduced into the chamber to grow Al2O3 dielectric on cleaned Ge. An abrupt Al2O3/Ge interface without interlayer is obtained for both cases. The valence band offset (VBO) at the Al2O3/Ge interface becomes smaller when the TMA precursor is first introduced. It is due to the lower CNL of gap states at Al2O3/Ge interface which is induced by the TMA treatment of Ge surface. Comparable gap state density at Al2O3/Ge interface are observed by C-V, indicating that the density states of gap states is not affected by the precursor pulse sequence. As a result, the precursor pulse sequence affects the CNL of gap states but not their density.