We report photoelectric properties of two-dimensional electron gas (2DEG) at an amorphous LaAlO3/SrTiO3 interface. Under visible light illumination (650 nm), an enhancement of electric conductivity is observed over the temperature range from 2 to 300 K. Particularly, a resistance upturn appearing below 25 K, which is further proved to from the Kondo effect, is suppressed by the 650 nm visible light. From the results of light-assisted Hall measurements, light irradiation increases the carrier mobility rather than carrier density in the Kondo regime. It is suggested that light induces the decoherence effect of localized spin states, hence the electron scattering is weakened and the carrier mobility is improved accordingly. Moreover, the enhancement of electrical conductivity by visible light verifies that in-gap states located in the SrTiO3 side of the interface play an important role in the electrical transport of the amorphous SrTiO3-based oxide 2DEG system. Our results provide deeper insight into the photoinduced effects in the 2DEG system, paving the way for the design of optoelectronic devices based on oxides.

The Tb[Formula: see text]Ce[Formula: see text]Mn6Sn6 compounds with [Formula: see text] crystallize in the hexagonal HfFe6Ge6-type structure (space group [Formula: see text]). The cerium (Ce) substitution for Tb increases the magnetization while reduces the Curie and spin-orientation temperatures. The hard magnetic properties are enhanced by the Ce substitution, e.g., from a coercivity of [Formula: see text] kOe for TbMn6Sn6 to [Formula: see text] kOe for the Ce-substituted compounds with [Formula: see text] at 5 K. The role of Ce substitution in the magnetocrystalline anisotropy is discussed based on the single-ion anisotropy model. The substitution of Ce for critical rare-earth atoms provides an opportunity of improving hard magnetic properties of the rare-earth-based intermetallics.