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The demand for low-voltage, low drop-out (LDO) regulators is increasing because of the growing demand for portable electronics, i.e., cellular phones, pagers, laptops, etc. LDO's are used coherently with dc-dc converters as well as standalone parts. In power supply systems, they are typically cascaded onto switching regulators to suppress noise and provide a low noise output. The need for low voltage is innate to portable low power devices and corroborated by lower breakdown voltages resulting from reductions in feature size. Low quiescent current in a battery-operated system is an intrinsic performance parameter because it partially determines battery life. This paper discusses some techniques that enable the practical realizations of low quiescent current LDO's at low voltages and in existing technologies. The proposed circuit exploits the frequency response dependence on load-current to minimize quiescent current flow. Moreover, the output current capabilities of MOS power transistors are enhanced and drop-out voltages are decreased for a given device size. Other applications, like dc-dc converters, can also reap the benefits of these enhanced MOS devices. An LDO prototype incorporating the aforementioned techniques was fabricated. The circuit was operable down to input voltages of 1 V with a zeroload quiescent current flow of 23 A. Moreover, the regulator provided 18 and 50 mA of output current at input voltages of 1 and 1.2 V, respectively.

This paper addresses the difficulty of designing 1-V capable analog circuits in standard digital complementary metal-oxide-semiconductor (CMOS) technology. Design techniques for facilitating 1-V operation are discussed and 1-V analog building block circuits are presented. Most of these circuits use the bulk-driving technique to circumvent the metaloxide-semiconductor field-effect transistor turn-on (threshold) voltage requirement. Finally, techniques are combined within a 1-V CMOS operational amplifier with rail-to-rail input and output ranges. While consuming 300 W, the 1-V rail-to-rail CMOS op amp achieves 1.3-MHz unity-gain frequency and 57 phase margin for a 22-pF load capacitance.

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