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In this paper, a physical SBT memristor-based chaotic circuit is presented. The circuit dynamic behavior of dependence on the initial state of the SBT memristor and a key circuit parameter are investigated by theoretical analyses and numerical simulations. The results indicate that different initial states of the SBT memristor and the key circuit parameter can significantly impact the dynamic behavior of the chaotic circuit, such as stable sink, periodic cycle, chaos, and even some complex transient dynamics. It can guide future research on the realization of chaotic circuit based on physical SBT memristor.

The Sr0.95Ba0.05TiO3 (SBT) nanometer film is prepared on the commercially available Pt/TiO2/SiO2/Si substrate by radio-frequency magnetron sputtering. The x-ray diffraction pattern and the scanning electron microscope image of the cross-sectional profile of the SBT nanometer film are depicted. The memristive mechanism is inferred. The mathematical model is calculated, where M(q) denotes the memristance depending on the quantity of electric charge, and q(t) denotes the quantity of electric charge depending on the time. The theoretical I–V characteristics of the SBT nanometer film are obtained by the mathematical model. The results show that the theoretical I–V characteristics are consistent with the measured I–V characteristics. Moreover, the mathematical model could guide the research on applications of the memristor.

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