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We report on the growth and characterization of nano and micro scale GaN structures selectively grown on the vertex of hexagonal GaN pyramids. SiO 2 near the vertex of hexagonal GaN pyramids was removed by optimized photolithgraphy process and followed by a selective growth of nano and micro scale GaN structures by metal organic vapor phase epitaxy (MOVPE). The pyramidal GaN nano and micro structures which have crystal facets of semi-polar {1-101} facets were formed only on the vertex of GaN pyramids and the size of the selectively grown nano and micro GaN structures was easily controlled by growth time. As a result of TEM maesurement, Reduction of threading dislocation density was conformed by transmission electron microscopy (TEM) in the selectively grown nano and micro GaN structures. However, stacking faults were newly developed near the edge of SiO