Nonlinear optical (NLO) frequency conversion is commonly used for generating midinfrared (MIR) lasers that offer light sources for a variety of applications. However, the low laser damage thresholds of NLO crystals used so far seriously limit the output power of MIR lasers. Here, a new nonlinear material 4H-SiC is demonstrated for producing MIR laser. Broadband MIR radiation ranging from 3.90 to 5.60 μm is generated in 4H-SiC by phase-matched difference-frequency generation for the first time.The results may open a door to practically utilize widebandgap semiconductors with high laser damage thresholds as NLO materials for high power output of MIR lasers.

Single-layer transition metal dichalcogenides are at the center of an ever increasing research effort both in terms of fundamental physics and applications. Exciton–phonon coupling plays a key role in determining the (opto)electronic properties of these materials. However, the exciton–phonon coupling strength has not been measured at room temperature. Here, we use two-dimensional micro-spectroscopy to determine exciton–phonon coupling of single-layer MoSe2. We detect beating signals as a function of waiting time induced by the coupling between A excitons and A′1 optical phonons. Analysis of beating maps combined with simulations provides the exciton–phonon coupling. We get a Huang–Rhys factor ~1, larger than in most other inorganic semiconductor nanostructures. Our technique offers a unique tool to measure exciton–phonon coupling also in other heterogeneous semiconducting systems, with a spatial resolution ~260 nm, and provides design-relevant parameters for the development of optoelectronic devices.

In recent several years, some works have been done on cosmic thermodynamics. The apparent horizon was regarded as the key characteristic supersurface where thermodynamics can be built on perfectly. However, if the irreversible process is considered, the proper position for building thermodynamics will not be the apparent horizon anymore. The new position is related to dark energy state equation and the irreversible process parameters.