To allow researchers to fabricate micro-and nano-devices on a small scale, without having to use complex cleanroom facilities, a single tool is proposed in which a variety of typical cleanroom techniques and processes is combined. This 'cleanroom' in SEM tool, based on a scanning electron microscope (SEM), integrates several addon tools, such as a miniature plasma source for sputtering and cleaning purposes, a miniature thermal evaporator for metal deposition, and facilities to enable in-situ selective atomic layer deposition. The cleanroom techniques and processes selected for integration in the 'cleanroom' in SEM tool are discussed, and the design and fabrication of the add-on tools are presented. Finally the proofs of principle of the plasma source, evaporator and insitu selective ALD process are experimentally demonstrated.

Semiconducting single-walled carbon nanotubes (s-SWCNTs) are considered as a replacement for silicon in fieldeffect transistors (FETs), solar cells, logic circuits, and so forth, because of their outstanding electronic, optical, and mechanical properties. Herein, we have studied the reaction of pristine SWCNTs dispersed in a pluronic F-68 (PF-68) polymer solution with para-amino diphenylamine diazonium sulfate (PADDS) to separate nanotubes based on their metallicity. The preferential selectivity of the reactions was monitored by changes in the semiconducting (S 22 and S 33 ) and metallic (M 11 ) bands by ultraviolet−visible−near infrared spectroscopy. Metallic selectivity depended on the concentrations of PADDS, reaction time, and the solution pH. Furthermore, separation of pure s-SWCNTs was confirmed by Raman spectroscopy and Fourier-transform infrared spectroscopy. After the removal of metallic SWCNTs, direct current electric field was applied to the pure s-SWCNT solution, which effectively directed the nanotubes to align in one direction as nanotube arrays with a longer length and high density. After that, electrically aligned s-SWCNT solution was cast on a silicon substrate, and the length of the nanotube arrays was measured as ∼2 to ∼14 μm with an areal density of ∼2 to ∼20 tubes/μm of s-SWCNTs. Next, electrically aligned s-SWCNT arrays were deposited on the channel of the FET device by drop-casting. Field-emission scanning electron microscopy and electrical measurements have been carried out to test the performance of the aligned s-SWCNTs/FETs. The fabricated FETs with a channel length of 10 μm showed stable electrical properties with a field-effect mobility of 30.4 cm 2 /Vs and a log 10 (I on /I off ) current ratio of 3.96. We envisage that this new chemical-based separation method and electric field-assisted alignment could be useful to obtain a high-purity and aligned s-SWCNT array network for the fabrication of high-performance FETs to use in digital and analog electronics.