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To address the non‐negligible volume expansion and the inherent poor electronic conductivity of silica (SiO2) material, microsphere‐like SiO2/MXene hybrid material is designed and successfully synthesized through the combination of the Stöber method and spray drying. The SiO2 nanoparticles are firmly anchored on the laminated MXene by the bonding effect, which boosts the structural stability during the long‐term cycling process. The MXene matrix not only possesses high elasticity to buffer the volume variation of SiO2 nanoparticles, but also promotes the transfer of electrons and lithium ions. Moreover, the microsphere wrapped with ductile MXene film reduces the specific surface area, relieves the side reactions, and enhances the coulombic efficiency. Therefore, superior electrochemical performance including high reversible capacity, outstanding cycle stability, high coulombic efficiency, especially in the first cycle, excellent rate capability as well as high areal capacity are acquired for SiO2/MXene microspheres anode.

An LLTO/PAN/SNE hybrid solid electrolyte membrane with high ionic conductivity and excellent compatibility with both LiFePO4 cathode and metallic lithium anode.

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detectivity, noise-equivalent temperature difference and response speed have been demonstrated, their high cost inevitably hinders the widespread usage of such detectors in civilian applications such as autonomous driving, industrial inspection, and chemical analysis.To address such challenges, various new materials systems (graphene, [1][2][3] MoS 2 , [4][5][6] carbon nanotube, [7,8] and black phosphorus [9,10] ) have been investigated. So far, HgTe colloidal quantum dots (CQDs) have attracted extensive attention due to their unique advantages such as easy solution processability, large-scale synthesis, tunable bandgaps and absorption wavelength (from short-wave infrared to long-wave infrared [11][12][13][14][15][16] ), and are therefore promising material to become a substitute for the traditional bulk epitaxial semiconductors.By introducing Ag + ions doping, HgTe CQD photodiodes, [17] for the first time, exhibited background-limited infrared performance (BLIP) with detectivity of 10 11 Jones at a cutoff wavelength between 4 and 5 µm. Benefitting from their solution