Articles you may be interested inFabrication of high resolution x-ray masks using diamond membrane for second generation x-ray lithographyThe viscosity of the gas in the proximity gap between x-ray mask and silicon wafer causes damping of any membrane motion. As x ray is extended to future integrated circuit generations, this effect becomes increasingly significant, because the gap must be rapidly scaled down to permit resolution of finer lithographic features. Damping is much greater at a reduced gap. Damping can be beneficial in reducing unwanted fluctuations in the gap due to vibration, convection, or ambient sound. The longer settling time following gap adjustment, however, can be detrimental to the throughput of x-ray steppers. This article introduces simple hydrodynamic models, formulas, and numerical algorithms to calculate membrane response to adjustments in gap setting. It applies the analysis to a variety of mask formats, including advanced "pedestal" design. Time constants of several seconds are shown to result from gap setting < 10 /-lm, which may be needed for 0.12 /-lm proximity x-ray lithography.

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A real-time through-the-lens alignment system that locks the mask and wafer together via a feedback system on a deep ultraviolet ͑DUV͒ camera is described. The mask can be moved to actively track wafer motions even when the resist is being exposed. In support of this, we have devised a novel, high sample rate alignment system. Bench top experiments have verified the basic principles behind the design, emphasizing the ''active'' alignment mode. A one-dimensional aligner will be installed on a stepper to test the concept with exposures on silicon wafers. The goal is to produce an alignment system that improves both overlay accuracy and throughput on DUV steppers.