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Magnetic field sensors based on the giant magnetoresistance (GMR) effect have a number of practical current and future applications. We report on a modeling of the magnetoresistive response of moving spin-valve (SV) GMR sensors combined in certain cluster networks to an inhomogeneous magnetic field of a label. We predicted a large variety of sensor responses dependent on the number of sensors in the cluster, their types of interconnections, the orientation of the cluster, and the trajectory of sensor motion relative to the label. The model included a specific shape of the label, producing an inhomogeneous magnetic field. The results can be used for the optimal design of positioning devices.

We demonstrate the magnetization reversal features in NiFe/IrMn/NiFe thin-film structures with 40% and 75% relative content of Ni in Permalloy in the temperature range from 80 K to 300 K. At the descending branches of the hysteresis loops, the magnetization reversal sequence of the two ferromagnetic layers is found to depend on the type of NiFe alloy. In the samples with 75% relative content of Ni, the bottom ferromagnetic layer reverses prior to the top one. On the contrary, in the samples with 40% of Ni, the top ferromagnetic layer reverses prior to the bottom one. These tendencies of magnetization reversal are preserved in the entire range of temperatures. These distinctions can be explained by the morphological and structural differences of interfaces in the samples based on two types of Permalloy.