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One of the main shortcomings in a field effect diode (FED) is its scaling. Use of an oxide layer in the channel is proposed to enhance the control of the gate on the channel carriers. This is the so-called silicon on raised insulator FED (SORI-FFD) structure. The Shockley–Read–Hall (SRH) mechanism is one of the main components of leakage current in FED devices. The potential induced by the gates in the OFF-state of a SORI-FFD, is larger than that induced by the gates of a regular FED. This reduces, SRH recombination rate. Hence, OFF-state characteristics of the SORI-FED device improves. We evaluate the impact of band-to-band tunneling (BTBT) on the electrical characteristics of Modified FED (M-FED).We show that for channel lengths of 35 nm and lower this device does not turn off. While, the proposed structure makes device channel length scaling possible down to 15 nm. We will also compare electrical characteristics of SORI-FED and M-FED using three metrics: gate delay time versus channel length, gate delay time versus I ON /I OFF ratio and energy-delay product versus channel length. Benchmarking results show the proposed FED structure provides improvement in I ON /I OFF ratio and holds promise for future logic transistor applications.

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We present transient time analysis of a two-turn optical microfiber coil resonator (MCR). Our dynamic model is based on two sets of equations, coupled mode and nonlinear Schrödinger equations. The pulse response of this device is obtained by numerically solving the modified sets of equations in a dynamic regime. The results show that if the input pulse of the MCR is set at an off-resonance wavelength, this resonator operates as an all-pass filter with neither loss nor time delay. But in the case of resonance, the output pulse may have loss and a relatively long time delay, according to the continuous rotation of light between the first and the second turns of the MCR. Tunable time delays up to t_d=320  ps are obtained by choosing different values of the coupling coefficients. Furthermore, the material and structural dispersions of the MCR are studied, and it is shown that strong dispersive effects can occur even in this millimeter dimensions photonic device. Pulse broadening and distortion effects of the MCR are studied in the dynamic regime. The results show that, for high bit rate applications, the dispersion effects of the MCR should be carefully considered. Finally, fundamental soliton solution and its conditions in the MCR are investigated.

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