Fast response time UV photoconductive detector was fabricated based on ZnO film prepared by thermal chemical spray pyrolysis technique. The ZnO nanofilms are grown on the porous silicon (PS) nanosurface which has drastically reduced the response time of the ZnO UV detector from few seconds to few hundreds of microseconds. The surface functionalization of the ZnO film deposited on porous silicon (PS) layer by polyamide nylon has highly improved the photoresponsivity of the detector to 0.8 A/W. The normalized de-tectivity (D*) of the fabricated ZnO UV detector at wavelength of 385 nm is found to be about 2.12 × 1011 cm Hz1/2 W–1. The ZnO film grown on the porous silicon layer was oriented in the c-axis and it is found to be a p-type semiconductor, which is referred to the compensation of the excess charge carriers in the ZnO film by the nanospikes silicon layer

A composite material, TiO2 nanotube arrays/ZnS nanoparticles (TNT/ZnS NPs) was assembled by deposition of ZnS nanoparticles onto anodized TiO2 nanotube by sequential chemical bath deposition method. The tube-based photoanodes are crystallized at 550 ºC prior to solar cell construction. The effect of annealing of TiO2 nanotube films at 550 ºC and pH values (7.5, 8.5 9.5) of prepared ZnS nanoparticles on the photovoltaic performance of flexible solar cells is studied. The characteristics of the flexible dye-sensitized solar cell were examined using a polyaniline as a counter electrode and KI/I2 as an electrolyte. Ruthenium dye (N719) was used as an active layer. The characterizations of the films were also accomplished by using atomic force microscopy, scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffractometry and FTIR. The flexible dye-sensitized solar cells of TNT/ZnS nanoparticles photoanode achieved a power conversion efficiency of 0.75 % under 80 mW/cm 2 illuminations, which is higher than that of bare TiO2 nanotube photoanode (0.3 %).

Porous silicon has been produced in this work by photochemical etching process (PC). The irradiation has been achieved using ordinary light source (150250 W) power and (875 nm) wavelength. The influence of various irradiation times and HF concentration on porosity of PSi material was investigated by depending on gravimetric measurements. The I-V and C-V characteristics for CdS/PSi structure have been investigated in this work too.

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