Here, we proposed a Tunnel-Injection graded-base Transistor Laser with double quantum well. We achieved 50% reduction in threshold current, 13.6GHz optical bandwidth enhancement, 0.9 increment in DC-current gain compared to previous reported results.

In this paper, we proposed a Vertical Cavity Tunneling Injection graded-base Transistor Laser with three quantum wells. We achieved a 14.8 GHz improvement in optical bandwidth compared to previously reported results.

Here, we represent a double quantum well Tunnel-Injection graded-base Transistor Laser with one barrier. We achieved 37.5% reduction in threshold current, and 11.1GHz increment in optical bandwidth compared to previously reported results.