Resistive random access memory (ReRAM) in metal/insulator/ metal (MIM) configurations, due to many properties, such as lower error rate, stability, applications in neuromorphic computing, memory and logic operations, and compatibility with already existing CMOS technology, has drawn huge research interest. [1][2][3][4][5] The resistive properties of transition metal oxides have been studied for two centuries. [6] However, resistive switching between two different resistive states was reported in 1967 for the first time. [7] Research efforts have been made to design two terminal flexible ReRAM devices with low leakage current, high endurance, and high integration density [8,9] in various active media including chalcogenides such as GeSbTe, GeSe, AgInSbTe, [10] halide and oxide perovskites such as BiFeO 3 , PCMO, and a-LSMO, [11] and other oxides such as SiO 2 , HfO 2 , Ta 2 O 5 , TiO 2 , and NiO. [12,13] A variety of materials such as ferroelectric tunnel junction BaTiO 3 = LaSrMnO 3 , [14] quantized conductance in graphene nanoplatelet ribbons suspended in 3-hexylthiophene polymer, [15] and chitosan with Pt/Ag doping [16] have been reported to achieve multiple resistive states. Recently, exploration of valance change resistive effect in polymer medium has drawn huge attention because its sensitivity to external stimuli. Polymers have added advantage over other media because they are cheap, sensitive, flexible and environment friendly, which can be used to realize the wearable flexible electronics devices. [17][18][19][20] Smart polymers, which can change their shape, volume, color, and electric resistance with external stimuli factors such as pH, electric field, magnetic field, and temperature, can provide an avenue to tune their resistive states with external factors. Deen et al. has successfully demonstrated the phase transition with temperature in poly(N-isopropylacrylamide) (PNIPAM). [2,21] This multiresponsive behavior with said external environmental factors allows us to achieve multifunctional memory elements for electronic and bioelectronics devices. [22] However, considerable efforts have not been made to investigate the effect of light and thermal energy on the resistive states of the smart polymer-based memristors. In this article, we demonstrate the repeatability, light, and heat sensitivity of valence change polymer ReRAM using PRPC as the active medium.