Electron paramagnetic resonance (EPR), X-ray photoelectron spectroscopy (XPS), and density functional theory (DFT) calculations are combined for the first time in an effort to characterize the paramagnetic species present in N-doped anatase TiO2 powders obtained by sol-gel synthesis. The experimental hyperfine coupling constants are well reproduced by two structurally different nitrogen impurities: substitutional and interstitial N atoms in the TiO2 anatase matrix. DFT calculations show that the nitrogen impurities induce the formation of localized states in the band gap. Substitutional nitrogen states lie just above the valence band, while interstitial nitrogen states lie higher in the gap. Excitations from these localized states to the conduction band may account for the absorption edge shift toward lower energies (visible region) observed in the case of N-doped TiO2 with respect to pure TiO2 (UV region). Calculations also show that nitrogen doping leads to a substantial reduction of the energy cost to form oxygen vacancies in bulk TiO2. This suggests that nitrogen doping is likely to be accompanied by oxygen vacancy formation. Finally, we propose that the relative abundance of the two observed nitrogen-doping species depends on the preparation conditions, such as the oxygen concentration in the atmosphere and the annealing temperature during synthesis.

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Nitrogen-doped titanium dioxide (N-TiO2), a photocatalytic material active in visible light, has been investigated by a combined experimental and theoretical approach. The material contains single-atom nitrogen impurities that form either diamagnetic (Nb-) or paramagnetic (Nb*) bulk centers. Both types of Nb centers give rise to localized states in the band gap of the oxide. The relative abundance of these species depends on the oxidation state of the solid, as, upon reduction, electron transfer from Ti3+ ions to Nb* results in the formation of Ti4+ and Nb-. EPR spectra measured under irradiation show that Nb centers are responsible for visible light absorption with promotion of electrons from the band gap localized states to the conduction band or to surface-adsorbed electron scavengers. These results provide a characterization of the electronic states associated with N impurities in TiO2 and, for the first time, a picture of the processes occurring in the solid under irradiation with visible light.

Defect states in reduced and n-type doped titania are of fundamental importance in several technologically important applications. Still, the exact nature of these states, often referred to as “Ti3+ centers”, is largely unclear and a matter of debate. The problem is complicated by the fact that electronic structure calculations based on density functional theory (DFT) in the local density approximation (LDA) or semilocal generalized gradient approximation (GGA) provide results that do not account for many of the experimentally observed fingerprints of the formation of Ti3+ centers in reduced TiO2. Here, we investigate the properties of at least four different types of Ti3+ centers in bulk anatase, (1) 6-fold-coordinated Ti6c 3+ ions introduced by F- or Nb-doping, (2) Ti6c 3+−OH species associated with H-doping, (3) undercoordinated Ti5c 3+ species associated with oxygen vacancies, and (4) interstitial Ti5c 3+ species. The characterization of these different kinds of Ti3+ centers is based on DFT+U and/or hybrid functional calculations, which are known to (partially) correct the self-interaction error of local and semilocal DFT functionals. We found that strongly localized solutions where an excess electron is on a single Ti3+ ion are very close in energy and sometimes degenerate with partly or highly delocalized solutions where the extra charge is distributed over several Ti ions. The defect states corresponding to these different solutions lie at different energies in the band gap of the material. This has important implications for the conductivity mechanism in reduced or n-type doped titania and suggests a significant role of temperature in determining the degree of localization of the trapped charge.