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Two approaches in nanoscale device fabrication are the top-down and bottom-up approach. The later method promises application in VLSI technology but a major challenge existed: integration for other devices as well as electrodes. Described in this paper, we have optimized preparation process for photoresist coating and photolithography. Patterned goldnanoparticles has been successfully deposited on top of a silicon substrate using positive photoresist as a mask. SEM characterization confirmed the presence of nanoparticles with average diameter of 55 nm while as EDS spectrum confirms the presence of gold nanoparticles on the patterned Si substrate.