Syntheses and characterization of two polymorphs of Cu(TCNQ) have been carried out and the results correlated to films of the materials. Reactions of CuI with TCNQ or [Cu(CH3CN)4][BF4] with TCNQ- lead to blue-purple needles of Cu(TCNQ) phase I (1). A slurry of this kinetic product in CH3CN yields a second crystalline phase of Cu(TCNQ), phase II (2), which exhibits a platelet morphology. Powder X-ray diffraction and scanning electron microscopy data revealed that both phases are present in films of Cu(TCNQ) formed by oxidation of Cu foil by TCNQ in CH3CN. X-ray photoelectron spectra of the two phases are indistinguishable from each other and are indicative of the presence of Cu(I). Single-crystal X-ray studies were undertaken on very small crystals of the two samples, the results of which reveal that subtle geometrical changes for the nitrile arrangements around the four-coordinate Cu(I) centers lead to major changes in the architectural framework of the polymers. Phase I was indexed in the tetragonal crystal system, but due to disorder and twinning, the crystal diffracted to only ∼40° in 2θ. The data were solved and refined in the monoclinic Pn space group. The polymeric motif consists of Cu atoms surrounded by four nitrile lone pairs of independent TCNQ- molecules arranged in a distorted tetrahedral geometry. A quadruply twinned crystal of Cu(TCNQ) phase II was indexed in the monoclinic system and resolved by deconvolution methods. The Cu(I) ions in phase II occupy the tetrahedral positions of a Cooperite structure (PtS), and the TCNQ- radicals occupy the square planar sites. In both phases there are two interpenetrating lattices present. In phase I the TCNQ- units are involved in close π-stacking interactions at ∼3.24 Å whereas in phase II the closest approach of the rings is ∼6.8 Å. In qualitative agreement with these observations are the magnetic properties; 1 is essentially diamagnetic and 2 displays Curie−Weiss behavior down to very low temperatures. The charge-transport properties of the samples revealed that, while they are both semiconductors, 1 is a good semiconductor with a room-temperature conductivity of 0.25 S cm-1 and a band gap of 0.137 eV whereas 2 is a very poor semiconductor with σ(rt) = 1.3 × 10-5 S cm-1 and a band gap of 0.332 eV. Cu(TCNQ) film devices have been found to switch between two states that exhibit very similar conducting properties.

Reaction of [(n-Bu)(4)N](2)[Re(2)Cl(8)] with the tetrathiafulvalene phosphine ligand o-{P(C(6)H(5))(2)}(2)(CH(3))(2)TTF (o-P2) in refluxing ethanol produces the mixed-nuclearity salt [ReCl(2)(o-P2)(2)][Re(2)Cl(6)(o-P2)] (1.2), composed of the mononuclear Re(III) complex (1) and the mixed-valence Re(II)-Re(III) dinuclear anion (2). The complex crystallizes as a CH(2)Cl(2) solvate in the triclinic space group P&onemacr;, a = 13.4559(1) Å, b = 20.4015(3) Å, c = 21.5538(1) Å, alpha = 88.261(1) degrees, beta = 72.987(1) degrees, gamma = 84.933(1) degrees, and Z = 2. The molecular cation consists of two trans o-P2 ligands in the equatorial plane and axial chloride ligands. The dinuclear anion adopts an eclipsed geometry with an unsymmetrical coordination environment for the two metal atoms; one Re(II) center is coordinated to a chelating o-P2 ligand and two chlorides while the other Re atom is coordinated to four chloride ligands. The dinuclear portion of the salt is a monoanion which leads to a formal bond order assignment of 3.5, based on the fact that the molecule possesses an Re(2)(5+) core. The salt was further characterized by infrared and electronic spectroscopies, electrochemistry, and variable temperature magnetic susceptibility; the presence of the individual ions in bulk samples was verified by positive and negative FAB mass spectrometry. Isolation of the two separate ions was achieved by treatment of the salt with Co(C(5)H(5))(2), which reduces the Re(III) cation to the Re(II) complex ReCl(2)(o-P2)(2) (3). This neutral compound was separated from the byproduct salt [Co(C(5)H(5))(2)][Re(2)Cl(6)(o-P2)] and reoxidized with CCl(4)/CH(2)Cl(2) or NOBF(4) to produce [ReCl(2)(o-P2)(2)][Cl] (1.[Cl]) and [ReCl(2)(o-P2)(2)][BF(4)] (1.[BF(4)]), respectively. Compounds 3, 1.[Cl], and 1.[BF(4)] were identified by a combination of infrared spectroscopy, mass spectrometry, and cyclic voltammetric measurements. Variable temperature dc susceptibility studies of [ReCl(2)(o-P2)(2)][Re(2)Cl(6)(o-P2)] (1.2) revealed classical Curie paramagnetic behavior (with a Curie constant equal to 0.395) and a large temperature independent paramagnetic contribution (chi(TIP) = 9.64 x 10(-)(3) emu/mol). The EPR spectrum of 1.2 consists of a broad, complex signal due to hyperfine interactions to both isotopes (185,187)Re (I = (5)/(2)) and (31)P (I = (1)/(2)) which is typical for paramagnetic metal-metal bonded dirhenium phosphine compounds.

No abstract

Abstractα-Alumina films are useful for high-temperature, wear, and semiconductor device applications because of their good oxidation resistance, high hardness values, and electrical properties. α-Alumina films have been previously synthesized using techniques such as chemical vapor deposition, sol-gel, physical vapor deposition, and plasma spraying. This paper presents an alternative approach for producing high quality dense α-alumina coatings using a flame-assisted process called combustion chemical vapor deposition (CCVD). This process is an open atmosphere technique that does not require the use of a reaction chamber. In this work alumina films were grown on YSZ at temperatures ranging from 900 to 1500°C. At lower temperatures only amorphous alumina was grown, but as the deposition temperature increased different alumina phases were formed. At 1100°C, a thin highly crystalline θ-Al2O3 coating was formed. At temperatures higher than 1100°C thick θ-Al2O3 coatings were deposited on the YSZ. Coatings were characterized by scanning electron microscopy (SEM) and x-ray diffraction (XRD).