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The growth of thin cubic silicon carbide (3C-SiC) buffer layers in an horizontal hot-wall chemical vapor deposition reactor, through the carbonization of differently oriented Si surfaces, is presented. A qualitative and quantitative study has been performed on statistical parameters related to voids due to the buffer layer growth on the different substrate orientations emphasizing shape, size, and density as a function of the substrate orientation. Variation in the void parameters can be attributed to the atomic packing density related to the substrate orientations, which were (100) Si, (111) Si, and (110) Si in this study. Scanning electron microscopy and transmission electron microscopy were performed to analyze the surface and the crystalline quality of the 3C-SiC films grown and, eventually, an empirical model for the carbonization of Si surfaces formulated. Large platens characterize the 3C-SiC films with shapes related to the orientations of the substrate. These platens derive from the two-dimensional growth of different SiC islands which enlarge during the process due to the continuous reaction between Si and C atoms. The interior part of platens was characterized by the presence of a pure crystalline material with the presence of small tilts affecting some grains in the 3C-SiC layer in order to relief the stress generated with the substrate.

One of the most interesting research fields in laser-matter interaction studies is the investigation of effects and mechanisms produced by nano-or micro-structured targets, mainly devoted to the enhancing of laser-target or laser-plasma coupling. In intense and ultra-intense laser interaction regimes, the observed enhancement of x-ray plasma emission and/or hot electron conversion efficiency is explained by a variety of mechanisms depending on the dimensions and shape of the structures irradiated. In the present work, the attention is mainly focused on the lowering of the plasma formation threshold which is induced by the larger absorptivity.Flat and nanostructured silicon targets were here irradiated with an ultrashort laser pulse, in the range 1 × 10 17 -2 × 10 18 W µm 2 cm −2 . The effects of structures on laser-plasma coupling were investigated at different laser pulse polarizations, by utilizing x-ray yield and 3/2ω harmonics emission. While the measured enhancement of x-ray emission is negligible at intensities larger than 10 18 W µm 2 cm −2 , due to the destruction of the structures by the amplified spontaneous emission (ASE) pre-pulse, a dramatic enhancement, strongly dependent on pulse polarization, was observed at intensities lower than ∼3.5 × 10 17 W µm 2 cm −2 . Relying on the three-halves harmonic emission and on the non-isotropic character of the x-ray yield, induced by the two-plasmon decay instability, the results are explained by the significant lowering of the plasma threshold produced by the nanostructures. In this view, the strong x-ray enhancement obtained by s-polarized pulses is produced by the interaction of the laser pulse with the preplasma, resulting from the interaction of the ASE pedestal with the nanostructures.