The wide bandgap Sb 2 S 3 is considered to be one of the most promising absorber layers in single-junction solar cells and a suitable top-cell candidate for multi-junction (tandem) solar cells. However, compared to mature thinfilm technologies, Sb 2 S 3 based thin-film solar cells are still lagging behind in the power conversion efficiency race, and the highest of just 7.5% has been achieved to date in a sensitized single-junction structure. Furthermore, to break single junction solar cell based Shockley-Queisser (S-Q) limits, tandem devices with wide bandgap top-cells and low bandgap bottom-cells hold a high potential for efficient light conversion. Though matured and desirable bottom-cell candidates like silicon (Si) are available, the corresponding mature wide bandgap top-cell candidates are still lacking. Hence, a literature review based on Sb 2 S 3 solar cells is urgently warranted. In this review, the progress and present status of Sb 2 S 3 solar cells are summarized. An emphasis is placed mainly on the improvement of absorber quality and device performance. Moreover, the low-performance causes and possible overcoming mechanisms are also explained. Last but not least, the potential and feasibility of Sb 2 S 3 in tandem devices are vividly discussed. In the end, several strategies and perspectives for future research are outlined.