An all-solution processed inverted green quantum dot-based light-emitting diode with concurrent high efficiency and long lifetime is obtained by precisely controlled double shell growth of quantum dots.

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Based on blue LED chips to excite Ce-doped yttrium aluminum garnet (YAG: Ce 3+) yellow phosphors, InP/ZnS green-emitting quantum dots (QDs) and InP/ZnSe/ZnS red-emitting QDs are used as light conversion materials for WLEDs to improve the color rendering index (CRI) of the device and improve its color coordinates. We have proven this in previous work. But in the previous work, we only studied the CRI of the driving current from 5 mA to 100 mA. The CRI and the Commission International de L'Eclairage (CIE) chromaticity coordinates of the WLED device prepared before is not ideal under high current conditions. The emission peak position of InP/ZnSe/ZnS red-emitting QDs we used in previous work is 605nm. In this article, we adjusted the emission peak position of InP/ZnSe/ZnS red-emitting QDs to 611nm, and prepared WLED in the same way, which improved the problem that the CRI of WLED devices decreases rapidly and the chromaticity coordinates change greatly under high current conditions. The CRI of prepared WLED device in this article was increased to 91.0, the CIE chromaticity coordinates is (0.3365, 0.3334), and the correlated color temperature (CCT) is 5313 K. We also tested the dependence of the electroluminescence (EL) spectrum, CRI, CCT and chromaticity coordinates of the prepared WLED device on the current. Compared with the prepared WLED device before, the CRI of the WLED device prepared in this article has always remained above 90, hovering between 90 ~ 91, very stable. The chromaticity coordinate distribution is also very concentrated, the amplitude of the offset black body radiation is small, and it shows excellent color rendering and stable working performance. A 30-day aging test was performed on the prepared WLED device.

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