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The characteristics of a hybrid p-n junction consisting of the hole-conducting polymer poly(3,4-ethylene-dioxythiophene)-poly(styrene-sulfonate) (PEDOT/PSS) and n-ZnO nanorods grown on an n-GaN layer on sapphire are reported. Spin coating of polystyrene was used to electrically isolate neighboring nanorods and a top layer of transparent conducting indium tin oxide (ITO) was used to contact the PEDOT/PSS. Multiple peaks are observed in the electroluminescence spectrum from the structure under forward bias, including ZnO band edge emission at ∼383nm as well as peaks at 430, 640, and 748nm. The threshold bias for UV light emission was <3V, corresponding to a current density of 6.08Acm−2 through the PEDOT/PSS at 3V.

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The transport properties of single InN nanowires grown by thermal catalytic chemical vapor deposition were measured as a function of both length/square of radius ratio and temperature. The resistivity of the n-type InN nanowires with diameter >100nm was measured by the transmission line method and the value was on the order of 4×10−4Ωcm. The specific contact resistivity for unalloyed Pd∕Ti∕Pt∕Au ohmic contacts was near 1.09×10−7Ωcm2. The temperature dependence of resistance showed a positive temperature coefficient and a functional form characteristic of metallic conduction in the InN.

In this study, Ga-doped ZnO ͑GZO͒ films deposited on a sapphire utilizing magnetron cosputtering method using ZnO and Ga 2 O 3 targets were demonstrated. The results revealed that the resistivities of the GZO films reduced by at least two orders of magnitude after the thermal annealing. The reduction in resistivity could be attributed not only to the activation of Ga dopants and to the increase of electron mobility, but also to the enlargement of the grain size that occurred as a result of thermal annealing. The resistivity of GZO films reduced from 1.4 ϫ 10 −1 to 5.3 ϫ 10 −4 ⍀ cm after the films had undergone thermal annealing in nitrogen ambience with temperature ranging from 400 to 800°C. Additionally, the GZO films exhibited semiconducting conductivity and metallic conductivity in as-deposited and annealed samples ͑Ͼ600°C͒, respectively.