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Bulk gallium nitride (GaN) power semiconductor devices are gaining significant interest in recent years, creating the need for technology computer aided design (TCAD) simulation to accurately model and optimize these devices. This paper comprehensively reviews and compares different GaN physical models and model parameters in the literature, and discusses the appropriate selection of these models and parameters for TCAD simulation. 2-D drift-diffusion semi-classical simulation is carried out for 2.6 kV and 3.7 kV bulk GaN vertical PN diodes. The simulated forward current-voltage and reverse breakdown characteristics are in good agreement with the measurement data even over a wide temperature range.

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This paper introduces a new self-powered solid state circuit breaker (SSCB) concept using a normally-on SiC JFET as the main static switch and a fast-starting isolated DC/DC converter as the protection driver. The new SSCB detects short circuit faults by sensing its drain-source voltage rise, and draws power from the fault condition to turn and hold off the SiC JFET. The new two-terminal SSCB can be directly placed in a circuit branch without requiring any external power supply or additional wiring. A unique low power isolated DC/DC converter is designed and optimized to provide a fast reaction to a short circuit event. The SSCB prototypes have experimentally demonstrated a fault current interruption capability up to 180 amperes at a DC bus voltage of 400 volts within 0.8 microseconds. DC circuit protection applications provide a unique market opportunity for wide bandgap power semiconductor devices outside the conventional focus on power electronic converter applications.