We investigate the temperature and injection dependence of the electroluminescence from an InGaN/GaN LED to characterize the defect-related recombination mechanism in this system. In contrast to the standard ABC recombination model, we show that the defect-related recombination rate varies superlinearly with carrier density. The elevated loss rate with injection indicates that defect states are less detrimental at low injection, only becoming available for occupation via carrier delocalization or more dynamic Shockley-Read-Hall statistics. This characteristic alleviates defect-related losses by making the radiative mechanism more competitive such that high dislocation density devices can perform better at low injection.

NATURE 883 Cofony Average Poisson prob-Strain No. of number ability of Medium size colonies of papillre drawing sim-(mm.

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