We demonstrate suppression of dephasing tied to deformation potential coupling of confined electrons to longitudinal acoustic (LA) phonons in optical control experiments on large semiconductor quantum dots (QDs) with emission compatible with the low-dispersion telecommunications band at 1.3 µm. By exploiting the sensitivity of the electron–phonon spectral density to the size and shape of the QD, we demonstrate a fourfold reduction in the threshold pulse area required to enter the decoupled regime for exciton inversion using adiabatic rapid passage (ARP). Our calculations of the quantum state dynamics indicate that the symmetry of the QD wave function provides an additional means to engineer the electron–phonon interaction. Our findings will support the development of solid-state quantum emitters in future distributed quantum networks using semiconductor QDs.

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We present a driving scheme for solid-state quantum emitters, referred to as Notch-filtered Adiabatic Rapid Passage (NARP), that utilizes frequency-swept pulses containing a spectral hole resonant with the optical transition in the emitter. NARP enables high-fidelity state inversion and exhibits robustness to variations in the laser pulse parameters, benefits that derive from the insensitivity of the condition for adiabatic evolution. NARP also offers the advantage of immunity to phonon-mediated excitation-induced dephasing when positively-chirped control pulses are used. Our resonant driving approach could be combined with spectral filtering of the scattered pump light and photonic devices for enhanced collection efficiency to realize simultaneous high indistinguishability and brightness in single photon source applications.

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