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The growth of diamond films on different substrates has been studied extensively to support the emerging technologies ranging from mechanical to nano/microelectronics. It is known that the performance of these applications is affected by diamond film properties, such as structure and morphology. Using chemical vapor deposition (CVD) technique, we have deposited ultrananocrystalline diamond (UNCD) and microcrystalline diamond (MCD) films on 4H-SiC substrates and investigated their basic material properties. The understanding and exploitation of the material properties are fundamental to evaluate the potential of UNCD-on-SiC and MCD-on-SiC structures for fabrication of electronic devices and sensors.