This paper describes the on-telescope performance of the Wide Field Spectrograph (WiFeS). The design characteristics of this instrument, at the Research School of Astronomy and Astrophysics (RSAA) of the Australian National University (ANU) and mounted on the ANU 2.3 m telescope at the Siding Spring Observatory has been already described in an earlier paper (Dopita et al. in Astrophys. Space Sci. 310:255, 2007). Here we describe the throughput, resolution and stability of the instrument, and describe some minor issues which have been encountered. We also give a description of the data reduction pipeline, and show some preliminary results.

The main goal of this study is to examine the possibility of using detailed three-dimensional simulations of transport of momentum, energy, and mass in horizontal single-wafer epitaxial silicon reactors in conjunction with relatively simple kinetic models to describe the reactor's performance over the entire range of operating conditions. As the SiHCl 3 -H 2 system is a widely used precursor for epitaxial silicon deposition in industrial applications, we have chosen to focus our model development on this system. In the development of the model we have considered the dependence of the gas properties on the gas composition as well as on the temperature. In addition, mass transport due to thermal diffusion has been considered. The accuracy of the simulation model has been examined by comparing the predicted silicon deposition rates and profiles in two commercial chemical vapor deposition (CVD) reactors with the experimentally measured values. A comparison of simulation and experimental results has indicated that a detailed transport model in conjunction with a Langmuir-Hinshelwood type kinetic model for silicon deposition accurately describes the epitaxial silicon deposition rate and deposition profile. In turn, this lumped reaction kinetic model has been used for optimization of commercially available horizontal CVD reactors for epitaxial deposition of silicon. Figure 1. Schematic representation of a typical horizontal CVD reactor.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 130.194.20.173 Downloaded on 2015-06-17 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 130.194.20.173 Downloaded on 2015-06-17 to IP

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