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Epitaxial wide-band gap II–VI beryllium chalcogenide semiconductor films BeTe, BeSe, and BeSeTe were grown on arsenic-terminated silicon substrates. Electrical characteristics of Schottky contacts to the films were measured. Current-temperature measurements at elevated temperatures showed conduction band offsets of 1.2 eV for the BeSe0.41Te0.59/As/Si and 1.3 eV for the BeSe/As/Si heterostructures. At room temperature, the current density through BeSe/Si and BeSe0.41Te0.59/Si films was mid-10−9 A/cm2 at 0.1 MV/cm, similar to previously reported values for ZnS/Si, while BeTe/Si films had orders of magnitude higher current density possibly due to interfacial recombination.