Titanium dioxide (TiO2) with highly exposed {001} facets was synthesized through a facile solvo-thermal method and its surface was decorated by using reduced graphene oxide (rGO) sheets. The morphology and chemical composition of the prepared rGO/TiO2 {001} nanocomposite were examined by using suitable characterization techniques. The rGO/TiO2 {001} nanocomposite was used to modify glassy carbon electrode (GCE), which showed higher electrocatalytic activity towards the oxidation of dopamine (DA) and ascorbic acid (AA), when compared to unmodified GCE. The differential pulse voltammetric studies revealed good sensitivity and selectivity nature of the rGO/TiO2 {001} nanocomposite modified GCE for the detection of DA in the presence of AA. The modified GCE exhibited a low electrochemical detection limit of 6 μM over the linear range of 2–60 μM. Overall, this work provides a simple platform for the development of GCE modified with rGO/TiO2 {001} nanocomposite with highly exposed {001} facets for potential electrochemical sensing applications.
Dopamine (DA) is an important catecholamine neurotransmitter in the mammalian central nervous system that influences several physiological functions. The impact of DA levels within the human body significantly affects the body functions. Maintaining DA level is essential and the electrochemical detection methods are often used to detect the DA level to regulate the body function. In this review, graphene (functionalized graphene and N-doped graphene) and its composites (metal, metal oxide, polymer, carbonaceous materials, clay, zeolite, and metal-organic framework based graphene composites) modified electrodes with their improved sensing performance towards DA along with several interfering species are described. Further, recent developments on the fabrication of various graphene based composite modified electrodes are also presented. Some important strategies to improve the selectivity and sensitivity towards DA with graphene based composite modified electrodes are also described.
Although perovskites are widely employed in other industries such as photovoltaics and light-emitting diodes (LEDs), digital technology is rapidly gaining pace in today’s market and shows no signs of abating. As a result, the progress of system memory and memory storage has accelerated into new inventions. The invention of dynamic Random-Access Memory (RAM) in the 1960s laid the groundwork for today’s multibillion-dollar memory technology sector. Resistive switching (RS) capabilities of perovskite-based materials such as perovskite oxides and metal halides have been extensively studied. Chemical stability, high endurance, quick writing speed, and strong electronic interaction correlation are some of the benefits of employing perovskites in RS devices. This chapter will investigate the progress of system memory and memory storage employing perovskites, the advantageous properties of perovskites utilized in memory devices, the various types of RS employing perovskites, as well as the research challenges that perovskite-based memory systems face in future commercial development.
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