No abstract

A new gate driver has been designed and fabricated by amorphous silicon (a-Si) technology. With utilizing four clock signals in the design of gate driver on array (GOA), the pull-up transistor has ability for both output charging and discharging, and layout size of the proposed gate driver can be narrowed for bezel panel application. Moreover, lower duty cycle of clock signals can decrease static power loss to further reduce the overall power consumption of the proposed gate driver. The scan direction of the proposed gate driver can be adjusted by switching two direct control signals to present the reversal display of image. The proposed gate driver has been successfully demonstrated in a 4.5-inch WVGA 480 800 TFT-LCD panel and passed reliability tests of the supporting foundry.Index Terms-Amorphous silicon (a-Si), gate driver, thin-film transistor liquid crystal display (TFT-LCD).

A hydrogenated amorphous silicon (a-Si:H) thin-film transistor(TFT) gate driver on array (GOA) with threshold voltage compensation at the low level holding TFT and full time noise-free for maintaining the high reliability has been proposed. The full-time noise-free part consists of an compensation circuit block and an pull down TFT with clock signal controlled. The method of threshold voltage compensation is the charge storage of capacitance with stress imitation TFT. Also, using single path for both charging and discharging with capacitive anti-noise block can efficiently resist noise signal and diminish the using area The proposed gate driver has been successfully processed and the measurement result is fit on simulation. Moreover, the proposed circuit design has passed 800 hours reliability test at high temperature and 4200 lux back-light with less degrade of performance.

We investigated the influence of passivation-layer deposition on the characteristics of a-InZnSnO thin-film transistors (TFTs). The threshold voltage (Vth) of the TFTs shifted markedly as a result of the ion bombardment induced by the passivation layers above. By adjusting the post annealing temperature, the performance of the TFTs can be modulated. The a-InZnSnO TFTs after passivation exhibited good performance with a field-effect mobility of 21.34 cm2/Vs, a threshold voltage of -5.03V, and a subthreshold slope of 0.52 V/decade.

A novel bi-directional transmission gate driver circuit integrated by amorphous silicon thin film transistors (a-Si:H TFTs) has been proposed. In the proposed design, the noise suppression structure of the gate driver utilized the AC drive inverter to reduce the degradation of the pull down TFTs. The clock frequency of AC signal is 30 Hz, which could reduce dynamic power consumption of the circuit. In addition, the synchronous controlled method in this research could reduce the amount of device in gate driver.The simulated result shows the good output performance of the gate driver and match the circuit design.