We studied the influence of temperature and pressure on the surface morphology and V-defects of the InGaN films. It was found that an appropriate increase in the growth temperature enhanced the mobility of Ga and In atoms, smoothened the surface of the InGaN thin film samples, and improved the growth quality. Simultaneously, increasing the temperature appropriately reduced the surface roughness of the sample and the defect density of the V-defects. It is also found that under the same temperature conditions, a lower pressure weakens the incorporation barrier of atoms, enhances the incorporation efficiency of In atoms, and improves the growth quality of InGaN.