Relatively high mobilities, μ=0.2 cm2 V−1 s−1 in the accumulation mode and μ=0.17 cm2 V−1 s−1 in the depletion mode, are reported for regioregular poly(3-hexylthiophene) (RR-P3HT) in field-effect transistors (FETs). Significantly higher mobility is obtained from FETs in which the RR-P3HT film is applied by dip-coating to a thickness of only 20−40 Å. These observations suggest that structural order of the semiconducting polymer at the interface between the semiconducting polymer and the SiO2 gate insulator is of paramount importance for achieving high carrier mobility. Heat treatment under nitrogen at 160 °C for 3 min increases the on/off ratio of the FET.

As the most frequent wound complication, infection has become a major clinical challenge in wound management. To overcome the “Black Box” status of the wound‐healing process, next‐generation wound dressings with the abilities of real‐time monitoring, diagnosis during early stages, and on‐demand therapy has attracted considerable attention. Here, by combining the emerging development of bioelectronics, a smart flexible electronics‐integrated wound dressing with a double‐layer structure, the upper layer of which is polydimethylsiloxane‐encapsulated flexible electronics integrated with a temperature sensor and ultraviolet (UV) light‐emitting diodes, and the lower layer of which is a UV‐responsive antibacterial hydrogel, is designed. This dressing is expected to provide early infection diagnosis via real‐time wound‐temperature monitoring by the integrated sensor and on‐demand infection treatment by the release of antibiotics from the hydrogel by in situ UV irradiation. The integrated system possesses good flexibility, excellent compatibility, and high monitoring sensitivity and durability. Animal experiment results demonstrate that the integrated system is capable of monitoring wound status in real time, detecting bacterial infection and providing effective treatment on the basis of need. This proof‐of‐concept research holds great promise in developing new strategies to significantly improve wound management and other pathological diagnoses and treatments.

Polymer field-effect transistors with a field-effect mobility of μ≈0.3cm2s−1V−1 have been demonstrated using regioregular poly(3-hexylthiophene) (rr-P3HT). Devices were fabricated by dip coating the semiconducting polymer followed by annealing at 150°C for 10min. The heat annealed devices exhibit an increased field-effect mobility compared with the as-prepared devices. Morphology studies and analysis of the channel resistance demonstrate that the annealing process increases the crystallinity of rr-P3HT and improves the contact between the electrodes and the P3HT films, thereby increasing the field-effect mobility of the films.

We report ahighly efficient dopant-matrix afterglow system enabled by TADF mechanism to realizea fterglow quantum yields of 60-70 %, which features am oderate rate constant for reverse intersystem crossing (k RISC )t os imultaneously improve afterglow quantum yields and maintain afterglow emission lifetime.D ifluoroboron b-diketonate (BF 2 bdk) compounds are designed with multiple electrondonating groups to possess moderate k RISC values and are selected as luminescent dopants.T he matrices with carbonyl functional groups such as phenyl benzoate (PhB) have been found to interact with and perturb BF 2 bdk excited states by dipole-dipole interactions and thus enhance the intersystem crossing of BF 2 bdk excited states.T hrough dopant-matrix collaboration, the efficient TADF-type afterglow materials have been achieved to exhibit excellent processability into desired shapes and large-area films by melt casting, as well as aqueous afterglow dispersions for potential bioimaging applications.